Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor

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概要

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• The stress-polarity-independent threshold voltage shift characteristics of HfO2 p-channel metal oxide semiconductor field-effect transistor (pMOSFET) with a TiN/p+ polycrystalline silicon electrode have been investigated. Positively charged defect states are shown to be generated under both positive and negative voltage stresses in HfO2 pMOSFET. Further enhancement of positive threshold voltage shift under the positive voltage stress is observed when HfO2 thickness is increased. In the analyses by charge pumping measurement, significant generation and relaxation of the interface state during the positive voltage stress and relaxation cycle were observed near the HfO2/SiO2 interface. This suggests that the generation of positively charged defect states under a positive voltage stress is related to traps in the HfO2 layer rather than in the interfacial SiO2 layer.

• 2008-01-25

著者

• Park Hokyung

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Hwang Hyunsang

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• BERSUKER Gennadi

  SEMATECH

• Lee Byoung

  Sematech

• Choi Rino

  Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• Hwang Hyunsang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Choi Rino

  Inha University, Incheon 402-751, Korea

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