Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment

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概要

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• This study demonstrates a simple and fast method of the operation mode control for ZnO nanowire field effect transistors (FETs) with hydrogen peroxide (H2O2, 10%) solution treatment for 5--10 s. With this H2O2 treatment, the surface of ZnO nanowires was roughened as confirmed by transmission electron microscopy images and the defect level-related emission was increased from photoluminescence (PL) data. Correspondingly, the threshold voltage of H2O2-treated ZnO nanowire FETs shifted to the positive gate bias direction, leading a transition of the operation mode from depletion-mode to enhancement-mode. This H2O2 solution treatment can be a useful method for controlling the operation mode of ZnO nanowire FETs with a wide threshold voltage shift in a few second solution treatment.

• 2012-03-25

著者

• Hwang Hyunsang

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Lee Takhee

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Choe Minhyeok

  School Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Lee Sangchul

  Department Of Aerospace And Mechanical Engineering Korea Aerospace University

• Lee Takhee

  Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea

• Park Woojin

  School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Kwon Taehyeon

  Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Yoon Jongwon

  School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Park Sangsu

  School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

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