Charge Storage Effect on In2O3 Nanowires with Ruthenium Complex Molecules
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概要
- 論文の詳細を見る
Charge storage effect on In2O3 nanowire field-effect transistors (FETs) is controlled by a chemical gate, ruthenium(II) terpyridine (Ru\text{II-tpy) complex molecules. In2O3 nanowire FETs functionalized with a self-assembled monolayer of the molecules exhibit large hysteretic characteristics with regard to source--drain current vs gate voltage characteristics. The devices are operated with reversible switching behavior at gate voltage cycles of writing, reading, erasing, and reading, and their retention time is in excess of 1000 s. These results reveal that the reversible chemical reaction (i.e., oxidation and reduction of the molecules) of Ru\text{II-tpy complexes produces a charging/discharging process of In2O3 nanowire FETs.
- 2009-01-25
著者
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Jo Gunho
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Takhee
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Insung
National Creative Research Initiative Center For Smart Molecular Memory Electronics And Telecommunic
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Lee Junghyun
National Creative Research Initiative Center For Smart Molecular Memory Electronics And Telecommunic
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Seo Kyoungja
National Creative Research Initiative, Center for Smart Molecular Memory, Electronics and Telecommun
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Choi Nak-Jin
Nano Convergence Sensor Team, Electronics and Telecommunications Research Institute, Daejeon 305-350
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Lee Hyoyoung
National Creative Research Initiative, Center for Smart Molecular Memory, Electronics and Telecommun
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Choi Nak-jin
Nano Convergence Sensor Team Electronics And Telecommunications Research Institute
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Seo Kyoungja
National Creative Research Initiative Center For Smart Molecular Memory Electronics And Telecommunic
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Lee Hyoyoung
National Creative Research Initiative Center For Smart Molecular Memory Electronics And Telecommunic
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