Intrinsic Electronic Transport through Alkanedithiol Self-Assembled Monolayer

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概要

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• Electronic transport through an alkanedithiol self-assembled monolayer (SAM) is investigated using a nanometer scale device. Temperature-independent current-voltage characteristics are observed, indicating tunneling is the main conduction mechanism. The measured current-voltage characteristics are analyzed with a metal-insulator-metal tunneling model. The inelastic electron tunneling spectroscopy (IETS) study on the octanedithiol device clearly shows the vibrational signatures of molecules. The pronounced IETS peaks correspond to vibrational modes perpendicular to the junction interface, which include the stretching modes of Au-S (at 33 mV) and C-C (at 133 mV), and wagging mode of CH2 (at 158 mV). Intrinsic linewidths are determined as 1.69 (upper limit), $3.73\pm 0.98$, and $13.5\pm 2.4$ meV for Au-S, C-C streching modes, and CH2 wagging mode, respectively. The observed peak intensities and peak widths are in good agreement with theoretical predictions.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-01-15

著者

• Reed Mark

  Departments Of Electrical Engineering Applied Physics And Physics Yale University

• Lee Takhee

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Lee Takhee

  Departments Of Electrical Engineering Applied Physics And Physics Yale University

• Wang Wenyong

  Departments of Electrical Engineering, Applied Physics, and Physics, Yale University, P.O. Box 20828

• Wang Wenyong

  Departments Of Electrical Engineering Applied Physics And Physics Yale University

• Wang WenYong

  Department of Pathology, The Fourth Military Medical University

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