Nano-Scale Memory Characteristics of Silicon Nitride Charge Trapping Layer with Silicon Nanocrystals
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概要
- 論文の詳細を見る
Silicon nanocrystals (Si-NCs) embedded in a silicon nitride (SiN) layer were fabricated as a charge trapping layer for nonvolatile memory (NVM) device applications. Nano-scale memory characteristics were investigated using conductive atomic force microscopy (C-AFM) and a semiconductor parameter analyzer. Nano-scale memory characteristics of Si-NCs embedded in the SiN layer were obtained from the shift of the current–voltage ($I$–$V$) curve. Charge trapping/detrapping and multi-level charge storage in Si-NCs embedded in the SiN layer were obtained at a metal–oxide–semiconductor (MOS) structure of about 100 nm2 at room temperature. The flat band voltage ($V_{\text{FB}}$) shift was about 0.37 V, which is agreed well with the calculated $V_{\text{FB}}$ shift for one electron per nanocrystal.
- Japan Society of Applied Physicsの論文
- 2006-08-25
著者
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Kim Tae-wook
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHOI Hyejung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Lee Takhee
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Hyejung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Sangmoo
SDL, Samsung Advanced Institute of Technology, Suwon 446-712, Korea
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Lee Takhee
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Kim Tae-Wook
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Tae-Wook
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Kim Tae-Wook
Department of Electronic Engineering, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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