Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping

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概要

• 論文の詳細を見る
• 2006-04-25

著者

• HWANG Hyunsang

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology

• Heo Sungho

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Lee Dongkyu

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Hwang Hyunsang

  Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology

• Baek Sungkweon

  Samsung Electronics Co. Ltd.

• BUH Gyongho

  Samsung Electronics Co., Ltd.

• SHIN Yugyun

  Samsung Electronics Co., Ltd.

• Buh Gyongho

  Samsung Electronics Co. Ltd.

• Shin Yugyun

  Samsung Electronics Co. Ltd.

• Hwang Hyunsang

  Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor

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