The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Lee Jong-ho
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. Gwangju Kor
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Hwang Hyunsang
Gwangju Institute Of Science And Technology
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Chang Man
Gwangju Institute Of Science And Technology
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JO Minseok
Gwangju Institute of Science and Technology
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PARK Hokyung
Gwangju Institute of Science and Technology
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JUNG Hyung-Suk
Advanced process Development Team, System LSI Division, Samsung Electronics Company, Ltd.
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Jung Hyung-suk
Advanced Process Development Team System Lsi Division Samsung Electronics Company Ltd.
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Hwang Hyunsang
Gwangju Inst. Sci. And Technol. (gist) Gwangju Kor
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Lee Jong-ho
Advanced Process Development Team System Lsi Division Samsung Electronics Company Ltd.
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- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
- Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping
- Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2
- Ultra-Shallow p+/n Junction Prepared by Low Energy BF_3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing
- The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
- Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance
- Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric
- Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices
- Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor