Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
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Hwang Cheol
School Of Materials Science And Engineering Seoul National University
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Hwang Cheol
School Of Materials Science & Engineering Seoul National University
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Lee Jong-ho
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
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PARK Chan
Department of Anatomy, College of Medicine, Kyung Hee University
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LEE Nae-In
Advanced Technology Center, Samsung Electronics Co. Ltd.
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CHO Hoon
Department of Physics, Dongguk University
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Kim Hyeong
School of Materials Science and Engineering, Seoul National University
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Park Chan
Department Of Physics Dongguk University
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Lee Nae-in
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
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Cho Hoon
Department Of Physics Dongguk University
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Jeon In
School Of Materials Science & Engineering Seoul National University
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Kim H
School Of Materials Science & Engineering Seoul National University
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Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
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Kang Ho-kyu
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
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PARK Jaehoo
School of Materials Science & Engineering, Seoul National University
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EOM Dail
School of Materials Science & Engineering, Seoul National University
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Park Jaehoo
School Of Material Science And Engineering Seoul National University
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Park Jaehoo
School Of Materials Science & Engineering Seoul National University
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Eom Dail
School Of Materials Science & Engineering Seoul National University
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Kim Hyeong
School Of Materials Science And Engineering Seoul National University
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Kim Hyeong
School Of Materials Science & Engineering Seoul National University
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Kim Hyeong
School Of Electrical And Electronics Engineering Chung-ang University
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Park Chan
Department Of Anatomy College Of Medicine Kyung Hee University
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