Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Ru thin films were deposited at 300℃〜400℃ using RU(C_5H_4C_2H_5)_2 (Ru(EtCp)_2) as a precursor by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD). The addition of O_2 gas is essential to form Ru thin films. The deposition rates of the films were about 200Å/min. At a lower oxygen addition and high substrate temperature, RUO_2 phases were formed. Thermodynamic calculation for Ru MOCVD were performed to explain the results of our experiments.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
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Choi K
Seoul National Univ. Seoul Kor
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Choi Kook
School Of Materials Science And Engineering Seoul National University
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Hwang Cheol
Semiconductor R&d Center Samsung Electronics Co.
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Hwang Cheol
School Of Materials Science And Engineering Seoul National University
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Kang Sang
School of Materials Science and Engineering, Seoul National University
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Lee Seok
School of Materials Science and Engineering, Seoul National University
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Kim Hyeong
School of Materials Science and Engineering, Seoul National University
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Lee Seok
School Of Materials Science And Engineering Seoul National University
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Lee S.k.
Display Device Research Lab. Lg Electronics Corp.
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Kang Sang
School Of Chemical Engineering College Of Engineering Seoul National University
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Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
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Kim Hyeong
School Of Materials Science And Engineering Seoul National University
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Kim Hyeong
School Of Materials Science & Engineering Seoul National University
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Kim Hyeong
School Of Electrical And Electronics Engineering Chung-ang University
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Hwang Cheol
School of Material Science and Engineering, Seoul National University
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