Effects of Low Resistivity TiN as a Wetting Layer on Submicron Via Contact Filling Process
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概要
- 論文の詳細を見る
In order to improve EM immunity, multi-layered metal structures, such as Ti/Al, TiN/Al, and Ti/TiN/Al, have been employed in Al metallization process. Due to the formation of TiAl_3, and AlN between the interfaces, however, the via resistance of the structures showed higher than expected to be used in high-speed devices. In this study, the use of low resistivity TiN was applied to overcome the problem and, as a result, the Al metallization with high thermal stability and low via resistance, showing the reduction of interfacial reaction was successfully achieved.
- 社団法人電子情報通信学会の論文
- 1997-07-24
著者
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Kim Y
Hynix Electronics Ind. Co. Ltd. Cheongju‐si Kor
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Kim Heon
Memory R&d Division Hyundai Electronics Co.
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Lee Seok
School Of Materials Science And Engineering Seoul National University
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Lee S.k.
Display Device Research Lab. Lg Electronics Corp.
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Kim Jong
Memory R&d Division Hyundai Electronics Co.
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Kim Young
Memory R&D Division, HYUNDAI Electronics Co.
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Yu Sang
Memory R&D Division, HYUNDAI Electronics Co.
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Lee Sang
Memory R&D Division, HYUNDAI Electronics Co.
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Yu Sang
Memory R&d Division Hyundai Electronics Co.
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Kim Young
Memory R&D Division, HYUNDAI Electronics Co.
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