Studies on the Formation of SiO_2 Films Using Liquid Phase Deposition Method and Their Basic Characteristics Related with the Application to Electronic Devices

概要

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This research was dedicated to the investigation of SiO_2 films formed by Liquid Phase Deposition(LPD) method. Because this technique uses room-temperature and no vacuum apparatus to grow SiO_2 films, which gives itself some possibility of the application in ULSI, a thermal stress and the incorporation of unwanted atoms could be avoided in case of LPD method. And then this method uses hydrofluorosilicic acid(H_2SiF_6) as the original growth solution. The growth rate 100nm/hr was obtained at the growth solution of 2.5mol/l. The P-etch rate of LPD-SiO_2 films showed a similar or better tendency compared with usual SiO_2 films. The fourier transform infrared(FTIR) spectra revealed that the contained fluorine atoms exist uniformly throughout the formed SiO_2 films. The Scanning Electron Microscope images showed that LPD-SiO_2 films could be stably grown on silicon substrates and the good step-coverage could also be obtained. And the I-V characteristics has some distinct differences depending on the concentration of growth solution.
社団法人電子情報通信学会の論文
1999-07-23