STABILITY OF AMORPHOUS SILICON TFT : UV EXPOSURE EFFECTS
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概要
- 論文の詳細を見る
We have investigated the degradation phenomena due to stresses such as gate bias application and visible light illumination as well as the ultraviolet (UV) exposure effects in amorphous silicon (a-Si) thin film transistors (TFT'S). The device parameters of the a-Si TFT, such as threshold voltage, field-effect mobility, and subthreshold slope, have been degraded by the bias stress and the vigible light illumination. Furthermore, we have found that the degradation in the a-Si TFT's are accelerated by multiple effects of the two stresses. However, the device characteristics of the a-Si TFT's are substantially improved by UV irradiation. Especially, after UV exposure, the off-current of This result may be the TFT's decreases remarkably while the on-current changes very little. attributed to an annealing effect on the dangling-bond defects in the a-Si layer of the TFT channel due to a number of phonons generated by the absorption of high energy UV phonons.
- 社団法人映像情報メディア学会の論文
- 1992-10-20
著者
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Han M.k.
Department Of Electrical Engineering Seoul National University
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Lee S.k.
Department Of Electrical Engineering Seoul National University
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Park J.s.
Department Of Electrical Engineering Seoul National University
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Kim Y.s.
Department Of Electrical Engineering Seoul National University
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Choi Y.I.
Department of Electronic Engineering, Ajou University
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Choi Y.i.
Department Of Electronic Engineering Ajou University
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Han M.K.
Department of Electrical Engineering, Seoul National University
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