Pulsed-laser-induced crystallization of fluorinated microcrystalline silicon films with different crystalline fraction
スポンサーリンク
概要
- 論文の詳細を見る
Laser-induced crystallization effects on fluorinated microcrystalline silicon films, in which the crystalline fraction is varied, have been investigated. Crystalline fractions of initial films, which has been evaluated from Raman data, is found to influence the laser-induced grain growth behavior. The gain growth is enhanced by the increase of surface melting and solidification times in the film with a critical initial crystalline fraction as well as by the fast lateral grain growth in the film with a relative high initial crystalline fraction.
- 社団法人電子情報通信学会の論文
- 1995-10-24
著者
-
Han M.k.
Department Of Electrical Engineering Seoul National University
-
Jang K.h
Lcd Develop. Team Ii Special Division Semiconductor Business Samsung Electronics Co. Ltd.
-
Choi H.S.
Department of Electrical Engineering, Seoul National University, Dept. of Electrical Engineering, Se
-
Jang K.H.
Department of Electrical Engineering, Seoul National University, Dept. of Electrical Engineering, Se
-
Min B.H.
Department of Electrical Engineering, Seoul National University, Dept. of Electrical Engineering, Se
-
Min B.h.
Department Of Electrical Engineering Seoul National University
-
Choi H.s.
Department Of Electrical Engineering Seoul National University
関連論文
- A Low Temperature PECVD Process of Phosphorous Doped Hydrogenated Microcrystalline Silicon Films
- A Low Temperature PECVD Process of Phosphorous Doped Hydrogenated Microcrystalline Silicon Films
- Pulsed-laser-induced crystallization of fluorinated microcrystalline silicon films with different crystalline fraction
- Pulsed-laser-induced crystallization of fluorinated microcrystalline silicon films with different crystalline fraction
- STABILITY OF AMORPHOUS SILICON TFT : UV EXPOSURE EFFECTS
- AMORPHOUS SILICON THIN FILM TRANSISTORS UNDER TEMPERATURE AND ELECTRICAL STRESS