A Low Temperature PECVD Process of Phosphorous Doped Hydrogenated Microcrystalline Silicon Films

概要

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Phosphorous(P) doped hydrogenated microcrystalline silicon (n^+μC-Si:H) films have been prepared by using hydrogen-diluted plasma enhanced chemical vapor deposition technique. 300mm × 400mm CORNING 7059 glass was used as a substrate. A detailed study of the process parameters such as deposition temperature, degree of hydrogen-dilution, RF-power, and deposition time has been investigated. It is found that microcrystalline phase can be obtained for the temperature between 250℃ and 350℃. The existence of μC-Si:H above a critical RF-power(>300W) suggests that RF-power plays an important role for the formation of μC-Si:H. For the film of 94nm thick deposited at 275℃ and 450W of RF-power, resistivity of 0.07 Ω-？ has been obtained which is 3 orders of magnitude lower than normal n^+a-Si:H. The replacement of n^+a-Si:H to heavily P-doped hydrogenated microcrystalline silicon can reduce the metal/a-Si:H contact resistance, but the plasma damage to a-Si:H during n^+uC-Si:H deposition results in the degradation of TFT performance.
社団法人電子情報通信学会の論文
1995-10-24