Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
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概要
- 論文の詳細を見る
Effects of fabrication process and capacitor size on the switching characteristics were investigated for Pt/SrBi_2Ta_2O_9 (SBT)/Pt capacitors. The switchable polarization (P^*-P^∧) and its saturation characteristic with operation voltage were degraded by the damage during capacitor etching, intermediate level dielectric (ILD) formation, and contact-hole etching. They were also degraded with decreasing capacitor size, because of the greater damage for the smaller capacitor. By optimization of fabrication process such as use of capacitor level dielectric (CLD) under ILD and proper recovery annealing, the damage could be sufficiently minimized, then the switchable polarization and its saturation characteristic were independent on capacitor size in the range from 100×100 to 1.4×1.4 μm^2.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Kim Chung
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Yang Woo
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yu Yong
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Lee Shang
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Yang W
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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Lee Seok
School Of Materials Science And Engineering Seoul National University
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Lee S.k.
Display Device Research Lab. Lg Electronics Corp.
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Yu Y
Chunghwa Picture Tubes Ltd. Taoyuan Twn
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Yang Woo
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Chung
Memory R&d Division Hyundai Electronics Co. Ltd.
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