Kim Nam | Memory R&d Division Hynix Semiconductor Inc.

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著作論文

Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method
Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_ (BLT) Thin Film
Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
Thickness Effects on Physical and Ferroelectric Properties of Bi_La_Ti_3O_ (BLT) Films with c-axis-Preferred and Random Orientations
Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

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