Roh J‐s | Memory Research And Development Division Hynix Semiconductor Inc.
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概要
関連著者
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Memory R&d Division Hynix Semiconductor Inc.
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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KWEON Soon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kweon Soon
Memory R&d Division Hynix Semiconductor Inc.
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kweon Soon
Memory Research And Development Division Hynix Semiconductor Inc.
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ROH Jae
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae
Memory R & D Division Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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Choi E
Memory Research And Development Division Hynix Semiconductor Inc.
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Yang Woo
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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CHOI Eun
Memory Research and Development Division, Hynix Semiconductor Inc.
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Yang W
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yang Woo
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Memory Research And Development Division Hynix Semiconductor Inc.
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Choi Eun
Memory R&d Division Hynix Semiconductor Inc.
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Yeo I‐s
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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SOHN Hyun-Chul
Memory R&D Division, Hynix Semiconductor Inc.
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SUN Ho-Jung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Sohn H‐c
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Sohn Hyun-chul
Memory R&d Division Hynix Semiconductor Inc.
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KWEON Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science andTechnology
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Yeo In-seok
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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ROH Jae-Sung
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Yang Jun-mo
Memory R&d Division Hynix Semiconductor Inc.
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Kim Jung-jin
Research Center For Interdisciplinary Research Tohoku University
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Choi S
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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JOO Jae-Hyun
Process Group, Advanced Technology Laboratory, LG Semicon
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ROH Jae-Sung
Process Group, Advanced Technology Laboratory, LG Semicon
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KIM Jae-Jeong
Process Group, Advanced Technology Laboratory, LG Semicon
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Kim Jae-jeong
Process Team R&d Division Lg Semicon Co Ltd.
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Roh Jae-sung
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Choi Si
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Joo Jae-hyun
Process Team R&d Division Lg Semicon Co Ltd.
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Incorporation
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Joo Jae-hyun
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kweon Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon 305-701, Korea
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CHOI Si
Department of Materials Science and Engineering, Korea Advanced Institute of Science andTechnology
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CHO Heung-Jae
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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PARK Dae-Gyu
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YEO In-Seok
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Yeo In-seok
Advanced Process Team Memory R&d Div. Hynix Semiconductor Inc.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor. Inc.
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Park Dae-gyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Oh Ki-young
Lg Semicon
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KIM Jin
Memory R&D Division, Hynix Semiconductor Inc.
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Jang S‐a
Memory R&d Division Hynix Semiconductor Inc.
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Park Tae-su
Memory R&d Division Hynix Semiconductor Inc.
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Jeon Y‐c
Process Group Advanced Technology Laboratory Lg Semicon
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Jeon Yoo-chan
Process Group Advanced Technology Laboratory Lg Semicon Co. Ltd.
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Kim Tae-kyun
Occupational Safety And Health Research Institute Korea Occupational Safety And Health Agency
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Kim Tae-kyun
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Oh Ki-young
Process Group Advanced Technology Laboratory Lg Semicon
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SEON Jeong-Min
Process Group, Advanced Technology Laboratory, LG Semicon
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Kim Y
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Jang Se-Aug
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Yang Jun-Mo
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Park Tae-Su
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Roh Jae-Sung
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Sun H‐j
Memory Research And Development Division Hynix Semiconductor Inc.
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Park Jong-bum
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Seon Jeong-min
Process Group Advanced Technology Laboratory Lg Semicon
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Jang Se-aug
R&d Division Hynix Semiconductor Inc.
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Inc.
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Jeon Yoo-chan
Process Group Advanced Technology Laboratory Lg Semicon
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PARK Jin
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YOON Hee-Koo
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Yeo I‐s
Hynix Semiconductor Inc. Kyoungki Kor
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Yeo In-seok
Memory R&d Division Hyundai Electronics Industries Co.ltd.
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Yeo In-seok
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yoon Hee-koo
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Yoon Hee-koo
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor Inc.
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Hwang Jeong-Mo
Advanced Technology Laboratory., LG Semicon Co.,
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Lee K‐s
Lg Siltron Inc. Kyungbuk Kor
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Young
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Park Y
Hynix Semiconductor Incorporated Kyoungki‐do Kor
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LEE Jeong-Youb
Memory R&D Division, Hynix Semiconductor Inc.
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LEE Jung-Ho
Memory R&D Division, Hynix Semiconductor Inc.
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PARK Young
Memory Research and Development Division, Hynix Semiconductor Inc.
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CHOl Si
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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YEON Seng
Memory R&D Division, Hyundai Electrontics Industries Co., Ltd.
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Lee Jong-min
Memory Research And Development Division Hynix Semiconductor Inc.
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CHOI Jin-Tae
Advanced Analytical Group, ULSI Laboratory, LG Semicon
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Lee Kong-soo
Process Team R&d Division Lg Semicon Co Ltd.
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PARK Jong-Bum
Process team, R&D division, LG Semicon Co, Ltd.
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KIM Younsoo
Process team, R&D division, LG Semicon Co, Ltd.
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LEE Jun-Sik
Process team, R&D division, LG Semicon Co, Ltd.
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KIM Younsoo
Advanced Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Park Young
Memory Research And Development Division Hynix Semiconductor Inc.
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LEE Tae
Memory Research and Development Division, Hynix Semiconductor Inc.
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HONG Tae
Memory Research and Development Division, Hynix Semiconductor Inc.
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Lee J‐s
Kyungpook National Univ. Taegu Kor
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Kim Jin
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Jin
Memory R&d Division Hynix Semiconductor Inc.
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Lee J‐h
Memory R&d Division Hynix Semiconductor Inc.
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KIL Deok-Sin
Advanced Process-Capacitor, Memory Research & Development Division, Hyundai Electronics Industries
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PARK Jong-Bum
Advanced Process-Capacitor, Memory Research & Development Division, Hyundai Electronics Industries
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YOON Dong-Soo
Advanced Process-Capacitor, Memory Research & Development Division, Hyundai Electronics Industries
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SONG Chang-Rock
Advanced Process-Capacitor, Memory Research & Development Division, Hyundai Electronics Industries
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CHO Ho
Advanced Process-Capacitor, Memory Research & Development Division, Hyundai Electronics Industries
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YU Yong-Sik
Advanced Process-Capacitor, Memory Research & Development Division, Hyundai Electronics Industries
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KIM Younsoo
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kim Younsoo
Memory Research And Development Division Hynix Semiconductor Inc.
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SONG Han-Sang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Lee Jeong-youb
Memory R&d Division Hynix Semiconductor Inc.
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Cho Hag-ju
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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Cho H
Samsung Electronics Co. Ltd. Kor
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Yoon Dong-soo
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Yu Yong-sik
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Lee Jun-sik
Process Team R&d Division Lg Semicon Co Ltd.
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Kim Younsoo
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kil Deok-sin
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Choi Jin-tae
Advanced Analytical Group Ulsi Laboratory Lg Semicon
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Song Chang-rock
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Lee Kong-soo
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Cho Ho
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Kim Jin
Memory Division Samsung Electronics Corporation
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Park Jong-Bum
Process team, R&D division, LG Semicon Co, Ltd.
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Kim Younsoo
Process team, R&D division, LG Semicon Co, Ltd.
著作論文
- Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate : Semiconductors
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
- Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method
- Stacked Pt/SrBi_2Ta_Nb_xO_9/Pt/IrO_x/Ir Capacitor on Poly Plug(Semiconductors)
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_ (BLT) Thin Film
- Thermal Stability and Electrical Properties of SrBi_2TaNb_XO_9/IrO_x Capacitors With Pt Top Electrode : Semiconductors
- Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
- Investigation of Ruthenium Electrodes for (Ba, Sr)TiO_3 Thin Films
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Dynamic Random Access Memory Applications
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Leakage Current Characteristics of (Ba,Sr) TiO_3 Thin Films Deposited on Ru Electrodes Prepared by Metal Organic Chemical Vapor Deposition
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor