Yeo In-seok | Advanced Process Team Memory R&d Div. Hynix Semiconductor Inc.
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概要
関連著者
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YEO In-Seok
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Yeo In-seok
Advanced Process Team Memory R&d Div. Hynix Semiconductor Inc.
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CHO Heung-Jae
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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PARK Dae-Gyu
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor. Inc.
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Park Dae-gyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Yeo I‐s
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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PARK Jin
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Yeo In-seok
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Yeo In-seok
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Cho Hag-ju
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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LIM Kwan-Yong
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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KO Jung-Kyu
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YOON Hee-Koo
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Ko Jung-kyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yoon Hee-koo
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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ROH Jae-Sung
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Lim Kwan-yong
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Roh Jae-sung
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Jin-woong
Memory R&d Division Hynix Semiconductor Inc.
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Hwang Jeong-Mo
Advanced Technology Laboratory., LG Semicon Co.,
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Yang Jun-mo
Memory R&d Division Hynix Semiconductor Inc.
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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KIM Joong-Jung
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YANG Jun-Mo
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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CHOI Il-Sang
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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KIM Jae-Young
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Yeom H.
Atomic-scale Surface Science Research Center Institute Of Physics&applied Physics Yonsei Univers
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Choi Il-sang
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Yang H.
Department of Physics, Center for Nano Science and Nano Technology, National Sun Yat-sen University
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JEON S.
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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CHANG H.
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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PARK D.
Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc.
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LIM K.
Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc.
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KOH H.
Atomic-scale Surface Science Research Center, Institute of Physics&Applied Physics, Yonsei Universit
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Yang H.
Department Of Physics Center For Nano Science And Nano Technology National Sun Yat-sen University
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Yang H.
Department Of Chemical Engineering Sogang University
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Jeon S.
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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PARK D.
Advanced Process Team, Memory R&D Div., Hynix Semiconductor, Inc.
著作論文
- Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Ultrathin Nitrided-Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Gate Dielectrics Application