Hwang J.-m. | Hyundai Electronics Industries Co.ltd. Memory R&d Division

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著作論文

Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
Characterization of Corner Induced Leakage Current in Shallow Silicided n^+/p Junction
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
On-Chip Extraction of Interconnect Line Induced Delay Time for Quarter and Sub-Quarter Micron CMOS Technology
TaO_xN_y Gate Dielectric with Improved Thermal Stability
ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
Characterization of Corner-Induced Leakage Current of a Shallow Silicided n^+/p Junction for Quarter-Micron MOSFETs
Impact of Nitrogen Implantation in Lightly Doped Drain(NIL)on Deep Sub-Micron CMOS Devices
The Impact of Nitrogen Implantation at LDD(NIL) on Deep Sub-Micron CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices

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