Hong Suk-kyoung | Feram Device Team Memory R&d Division Hynix Semiconductor

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著作論文

Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.

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