Hong Suk-kyoung | Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
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概要
関連著者
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Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hong Suk-kyoung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hong Soon-kil
Dong Il Technology Ltd.
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Kang N
Hynix Semiconductor Kyoungki‐do Kor
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Lee Chang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kang Y
Hynix Semiconductor Kyoungki‐do Kor
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Lee Chang
Memory Research And Development Division Hynix Semiconductor Inc.
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Yang B
Feram Device Team Memory R&d Division Hynix Semiconductor
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Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Lee Seaung
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Lee Seaung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kang Nam
Memory Research and Development Division, Hynix Semiconductor Inc.
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Oh Sang
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kwon Oh
School Of Material Science And Engineering Seoul National University
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Hwang Cheol
Semiconductor R&d Center Samsung Electronics Co.
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Hwang Cheol
School Of Materials Science And Engineering Seoul National University
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Suh Chung
Ferroelectric Technology Department Hyundai Electronics Industries Co. Ltd.
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Hong Suk-Kyoung
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Baek Yong
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Yang B
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Kang Young
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Lee Chang
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Kang Nam
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Kang Young
Ferroelectric Technology Department Hyundai Electronics Industries Co. Ltd.
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Son J‐h
Hyundai Electronics Industries Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Ahn J.-g.
Lg Semicon Co. Ltd. R&d Division
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Baek Yong
Ferroelectric Technology Department Hyundai Electronics Industries Co. Ltd.
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Kang C.-y.
Lg Semicon Co. Ltd. R&d Division
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Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
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Hong S.-K.
LG Semicon Co., Ltd, R&D Division
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Choi J.-H.
LG Semicon Co., Ltd., R&D Division
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Lee S.-G.
LG Semicon Co., Ltd., R&D Division
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Son J.-H.
LG Semicon Co., Ltd., R&D Division
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Hwang J.-M.
LG Semicon Co., Ltd., R&D Division
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Choi J.-h.
Lg Semicon Co. Ltd. R&d Division
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Hong S.-k.
Lg Semicon Co. Ltd R&d Division
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Son J.-h.
Lg Semicon Co. Ltd. R&d Division
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Lee S.-g.
Lg Semicon Co. Ltd. R&d Division
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Yang B.
Ferroelectric Technology Department, Hyundai Electronics Industries Co., Ltd.
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Hwang Cheol
School of Material Science and Engineering, Seoul National University
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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Oh Sang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Hong Suk-Kyoung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Lee Seok
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Hwang Chi-sun
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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Jeong Dong-youl
Interpion Co.ltd.(a&d Semiconductor Co.ltd.)
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Hong Suk-kyoung
Memory R&d Division Hynix Semiconductor Inc.
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Joo Sung-jun
Interpion Co.ltd.(a&d Semiconductor Co.ltd.)
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Chung Choong
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Y
Feram Device Team Memory R&d Division Hynix Semiconductor
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Lee Seok
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Chan
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kang Young
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Nam
Feram Device Team Memory R&d Division Hynix Semiconductor
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CHUNG Choong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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YANG Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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HONG Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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KANG Young
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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YANG Beelyong
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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CHUNG Choong
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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KYE Hun
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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HONG Suk
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Kye Hun
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Yang Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
著作論文
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi_2Ta_2O_9/Pt Capacitor(Special Issue on Nonvolatile Memories)
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- The Piezoceramic Transformer Based LCD Backlight Inverter Control IC
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
- Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.