Oh Sang | Feram Device Team Memory R&d Division Hynix Semiconductor
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概要
関連著者
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Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Oh Sang
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang N
Hynix Semiconductor Kyoungki‐do Kor
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Lee Seaung
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk-kyoung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hong Soon-kil
Dong Il Technology Ltd.
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Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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Oh Sang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Hong Suk-Kyoung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Lee Seok
Memory Research and Development Division, Hynix Semiconductor Inc.
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Lee Chang
Memory Research and Development Division, Hynix Semiconductor Inc.
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Lee Seaung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kang Nam
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kang Young
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Nam
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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YANG Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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HONG Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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Lee Chang
Memory Research And Development Division Hynix Semiconductor Inc.
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Hong Suk-kyoung
Memory R&d Division Hynix Semiconductor Inc.
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Chung Choong
Feram Device Team Memory R&d Division Hynix Semiconductor
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Lee Seok
Memory Research And Development Division Hynix Semiconductor Inc.
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Hong Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Yang Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Lee Chan
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kang Y
Hynix Semiconductor Kyoungki‐do Kor
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Hwang Chi-sun
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
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CHUNG Choong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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Yang B
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Y
Feram Device Team Memory R&d Division Hynix Semiconductor
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Oh Sang
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kang Nam
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Chung Choong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kang Young
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Lee Seaung
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
著作論文
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory