HONG Suk | FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
スポンサーリンク
概要
関連著者
-
Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Oh Sang
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Kang Young
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Kang Nam
Feram Device Team Memory R&d Division Hynix Semiconductor
-
YANG Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
-
HONG Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
-
Chung Choong
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Hong Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
-
Yang Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
-
Kang Y
Hynix Semiconductor Kyoungki‐do Kor
-
Kang N
Hynix Semiconductor Kyoungki‐do Kor
-
Hwang Chi-sun
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
-
CHUNG Choong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
-
Lee Seaung
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
-
Hong Suk-kyoung
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
-
Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
-
Hong Soon-kil
Dong Il Technology Ltd.
-
Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Yang B
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Kang Y
Feram Device Team Memory R&d Division Hynix Semiconductor
-
Oh Sang
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
-
Kang Nam
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
-
Chung Choong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
-
Kang Young
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
-
Lee Seaung
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
著作論文
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory