Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-15
著者
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Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Oh Sang
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Y
Hynix Semiconductor Kyoungki‐do Kor
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Kang Young
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang N
Hynix Semiconductor Kyoungki‐do Kor
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Kang Nam
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hwang Chi-sun
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
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CHUNG Choong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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YANG Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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HONG Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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Lee Seaung
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk-kyoung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hong Suk-kyoung
Semiconductor Advanced Research Division Hyundai Electronics Industries Co. Ltd.
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Hong Suk
Memory Research And Development Division Hyundai Electronics Industries Co. Ltd.
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Hong Soon-kil
Dong Il Technology Ltd.
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Hong S.-k.
Feram Device Team Memory R&d Division Hynix Semiconductor
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Chung Choong
Feram Device Team Memory R&d Division Hynix Semiconductor
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Yang B
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Y
Feram Device Team Memory R&d Division Hynix Semiconductor
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Hong Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Yang Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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- Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory