Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
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概要
- 論文の詳細を見る
We investigated on the polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors for ferroelectric random access memory (FeRAM). Apparent switching time of the ferroelectric capacitors, measured with ferroelectric tester, is composed with various parameters of measurement set-up, and is also a function of area of the ferroelectric capacitors. True switching time of the ferroelectric capacitor, which is obtained by removing the effect of the measurement set-up, is about 10 ns. However, it is not a limiting factor for realization of high-speed (${\sim}50$ ns) non-volatile FeRAM.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2002-02-15
著者
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Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Oh Sang
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Young
Feram Device Team Memory R&d Division Hynix Semiconductor
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Kang Nam
Feram Device Team Memory R&d Division Hynix Semiconductor
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YANG Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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HONG Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor
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Chung Choong
Feram Device Team Memory R&d Division Hynix Semiconductor
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Oh Sang
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Hong Suk
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kang Nam
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Chung Choong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kang Young
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Lee Seaung
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Yang Beelyong
FeRAM Device Team, Memory R&D Division, Hynix Semiconductor, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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