Ferroelectric Memories using Randomly Oriented (Bi1-xLax)4Ti3O12 Films
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概要
- 論文の詳細を見る
We report on superior reliabilities at high temperature of ferroelectric memories using [Bi1-xLax]4Ti3O12 (BLT) films, which are randomly oriented by special bake treatments. The ferroelectric memories are based on 0.35 μm complementary metal–oxide–semiconductor (CMOS) technology ensuring ten-year retention and imprint at 175°C. This excellent reliability resulted from newly developed BLT ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-15
著者
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Lee Seaung
Feram Device Team Memory R&d Division Hynix Semiconductor
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Park Young
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Kang Young
Feram Device Team Memory R&d Division Hynix Semiconductor
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KIM Nam
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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KWEON Soon
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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YEOM Seung
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated
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Noh Keum
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Yang Beelyong
Kumoh National Institute Of Technology Department Of Materials Science And Engineering
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Lee Seok
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Lee Seok
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kang Young
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Yeom Seung
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Noh Keum
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kim Nam
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Lee Seaung
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Kweon Soon
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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Park Young
FeRAM Team, Memory R&D Division, Hynix Semiconductor Incorporated, San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do, 467-701, Korea
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