Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_<12> Capacitor for Ferroelectric Memory

概要

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We have investigated the ferroelectric performance of Pt/(Bi, La)_4Ti_3O_<12>(BLT)/Pt capacitor for ferroelectric memory application. The BLT films were deposited using a spin-on process with metalorganic decomposition(MOD) solution. Bi/La content in the solution composition, bake process, and crystallization anneal process were optimized to obtain a good ferroelectric performance. 90 nm-thick BLT(Bi/La=3.37/0.86)films that were crystallized by a modified bake process carried out in more oxidizing ambient than air and an anneal process performed at less than 650℃ in O_2 ambient showed a remnant polarization of 14 μC/cm^2, a coercive voltage of 1.0 V, and a leakage current density of 1×10^<-5> A/cm^2 after SiO_2/Si_3N_4 passivation. These results indicate that BLT films are successfully applicable to the stacked capacitor(capacitor on plug structure)for high density FeRAM.
社団法人電子情報通信学会の論文
2001-06-29