Thickness Effects on Physical and Ferroelectric Properties of Bi_<3.35>La_<0.85>Ti_3O_<12> (BLT) Films with c-axis-Preferred and Random Orientations
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-02-15
著者
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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ROH Jae
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae
Memory R&d Division Hynix Semiconductor Inc.
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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KWEON Soon
Memory Research and Development Division, Hynix Semiconductor Inc.
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CHOI Eun
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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YANG Woo
Electronics and Telecommunications Research Institute (ETRI)
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Roh Jae
Memory R & D Division Hynix Semiconductor Inc.
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Choi Eun
Memory R&d Division Hynix Semiconductor Inc.
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Yang Woo
Electronics And Telecommunications Research Institute
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Kweon Soon
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory R&d Division Hynix Semiconductor Inc.
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