The Property of Ta_2O_5 On Chemical Vapor Deposited Ru Film Fabricated using Tris (2,4-Octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor : Semiconductors

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Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
The Property of Ta_2O_5 On Chemical Vapor Deposited Ru Film Fabricated using Tris (2,4-Octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor : Semiconductors
Thermal Stability and Electrical Properties of SrBi2Ta2-xNbxO9/IrOx Capacitors with Pt Top Electrode
Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
Thickness Effects on Physical and Ferroelectric Properties of Bi3.35La0.85Ti3O12 (BLT) Films with $c$-axis-Preferred and Random Orientations
Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium

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