Thin Oxides Grown on Disilane-Based Polysilicon(Semiconductors)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-06-15

著者

• Lee J

  Department Of Electronic Engineering National Chiao Tung University

• Lee Jam

  Department Of Computational Nanoelectronics National Nano Device Laboratories

• Lee Joo

  Memory R&d Division Hyundai Electronics Industries Co.

• LEI Tan

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LEE Chung-Len

  Department of Electronic Engineering, National Chiao Tung University

• Lee Chung-len

  Department Of Electronic Engineering National Chiao Tung University

• Lei Tan

  Department Of Electronic Engineering National Chiao Tung University

関連論文

• The Impact of Titanium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Polysilicon
• Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
• Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
• Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
• Thin Oxides Grown on Disilane-Based Polysilicon(Semiconductors)
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
• Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices
• Electrostatic Discharge Protection under Pad Design for Copper-Low-K VLSI Circuits
• The Property of Ta_2O_5 On Chemical Vapor Deposited Ru Film Fabricated using Tris (2,4-Octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor : Semiconductors
• Improvement of Reliability of MOSFET's with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon Thin Films of Various Thicknesses
• Effects of BCl_3 Passivation on Pt/Al/n-InP Diodes
• A Novel Shallow Trench Isolation Technique
• A Novel Shallow Trench Isolation Technique
• A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask
• Suppression of Boron Pemetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
• Improvement of Ultra-Thin 3.3 nm Thick Oxide for Co-Salicide Process Using NF_3 Annealed Poly-Gate
• Optimum Conditions for Novel One-Step Cleaning Method for Pre-Gate Oxide Cleaning Using Robust Design Methodology
• Fourier Transform Infrared Spectroscopic Study of Oxide Films Grown in Pure N_2O
• The Characteristics of Polysilicon Oxide Grown on Amorphous Silicon Deposited from Disilane
• Novel Vertical Polysilicon Thin-Film Transistor with Excimer-Laser Annealing
• Effects of BCl3 Passivation on Pt/Al/n-InP Diodes
• Drain/Gate-Voltage-Dependent On-Current and Off-Current Instabilities in Polycrystalline Silicon Thin-Film Transistors under Electrical Stress
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing

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