Fourier Transform Infrared Spectroscopic Study of Oxide Films Grown in Pure N_2O
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概要
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The properties of the oxide films grown by pure N_2O were studied in this work. A two-layer model, considering a N_2O oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N_2O thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.
- 社団法人応用物理学会の論文
- 1995-05-15
著者
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Chen Wen
National Nano Device Laboratory
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Chao Tien
National Device Laboratory
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Lei Tan
Department Of Electronic Engineering National Chiao Tung University
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Chen Wen
National Amorphous And Nanocrystalline Alloys Engineering Research Center Central Iron And Steel Res
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Lei Tan
Department Of Electronics And Engineering And Institute Of Electronics National Chiao Tung Universit
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