Improvement of Polysilicon Oxide Integrity Using NF_3-Annealing

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概要

• 論文の詳細を見る

• We report a method to improve the polysilicon oxide integrity by using NF_3-annealing. Incorporating with stronger Si-N and Si-F bonds at the polysilicon/ polyoxide interface, significant improvements are found in terms of roughness, breakdown strength, charge-to-breakdown, and stress -induced-leakage-current.

• 社団法人応用物理学会の論文
• 2000-06-15

著者

• Chen Yu

  Institute of Botany, Academia Sinica

• YANG Wen

  Institute of Parasitic Diseases, Sichuan Center for Disease Control and Prevention

• CHAO Tien

  National Nano Device Laboratories

• Chao Tien

  National Device Laboratory

• Lei Tan

  Institute And Department Of Electronics National Chiao Tung University

• Liu Don-gey

  Institute And Department Of Electrical Engineering Feng Chia University

• Yang Wen

  Institute And Department Of Electrical Engineering Feng Chia University

• SHIEH Ming

  Institute and Department of Electronics, National Chiao Tung University

• Chen Yu

  Institute And Department Of Electrical Engineering Feng Chia University

• Shieh Ming

  Institute And Department Of Electronics National Chiao Tung University

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