Ellipsometric Measurements and its Alignment : Using the Intensity Ratio Technique

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-09-15

著者

• CHAO Tien

  National Nano Device Laboratories

• Chao Tien

  National Device Laboratory

• Chao Tien

  National Nano Device Laboratory

• Lee W‐c

  National Chiao Tung Univ. Hsinchu Twn

• Lee Wen-chin

  Department Of Applied Chemistry National Chiao Tung University

• CHAO Yu-Faye

  National Chiao Tung University, Electro-Optical Engineering

• WET Chi-Shin

  National Chiao Tung University, Electro-Optical Engineering

• LEE Wen-Chi

  National Chiao Tung University, Electro-Optical Engineering

• LIN Shy-Chaung

  National Chiao Tung University, Electro-Optical Engineering

• Wet Chi-shin

  National Chiao Tung University Electro-optical Engineering

• Chao Y‐f

  National Chiao Tung Univ. Hsinchu Twn

• Lin S‐c

  Ahead Optoelectronics Inc. Hsien Twn

関連論文

• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
• A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
• Effects of Floating-Gate Doping Concentration of Flash Cell Performance
• Photo-Induced Liquid Crystal Alignment with Discotic Films
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Improvement of Thin Oxides Thermally Grown on the Reactive-Ion-Etched Silicon Substrates
• Effects of Postetching Treatments on Electrical Characteristics of Thermal Oxides on Reactive-Ion-Etched Silicon Substrates
• Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
• Suppression of Boron Penetration in BF^+_2-Implanted Poly-Si Gate
• Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
• A Novel Shallow Trench Isolation Technique
• A Novel Shallow Trench Isolation Technique
• Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
• A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask
• Suppression of Boron Pemetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
• Sensitivity of the Photo-Crosslinkable Polyimide for Llquld Crystal Alignment : Optics and Quantum Electronics
• Liquid Crystal Aignment with a Photo-Crosslinkable and Solvent-Soluble Polyimide Film
• Ellipsometric Measurements and its Alignment : Using the Intensity Ratio Technique
• Improvement of Ultra-Thin 3.3 nm Thick Oxide for Co-Salicide Process Using NF_3 Annealed Poly-Gate
• Optimum Conditions for Novel One-Step Cleaning Method for Pre-Gate Oxide Cleaning Using Robust Design Methodology
• Improvement of Polysilicon Oxide Integrity Using NF_3-Annealing
• Fourier Transform Infrared Spectroscopic Study of Oxide Films Grown in Pure N_2O

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