Suppression of Boron Pemetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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LEE Chung
Department of Anesthesiology and Pain Medicine, Asan Medical Center, University of Ulsan College of
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Chao T
National Chiao Tung Univ. Hsinchu Twn
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Lei T
National Chiao Tung Univ. Hsinchu Twn
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LEI Tan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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CHAO Tien
National Nano Device Laboratories
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Chao T‐s
Department Of Electrophysics National Chiao Tung University
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Chao Tien
National Device Laboratory
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Lee Chung
Department Of Electronics Engineering National Chiao Tung University
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Lei Tan
Department Of Electronic Engineering National Chiao Tung University
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Lee C
Department Of Electronics Engineering National Chiao Tung University
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Lei Tan.
National Nano Device Laboratory:department Of Electronics Engineering And Institute Of Electronics N
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Lin Yug
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung Univergity
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Lin Y
National Taiwan Univ. Taipei Twn
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Lee Chung
Department Of Anesthesiology And Pain Medicine Asan Medical Center University Of Ulsan College Of Me
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