The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-12-01

著者

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• CHANG Chun-Yen

  National Nano Device Laboratories

• Chao T

  National Chiao Tung Univ. Hsinchu Twn

• Chien C‐h

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• LIN Horng-Chih

  National Nano Device Labs.

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• CHAO Tien-Sheng

  National Nano Device Laboratories

• CHANG Sun-Jay

  Institute of Electronics, National Chiao-Tung University

• CHIEN Chao-Hsin

  Institute of Electronics, National Chiao-Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories

• Chao T‐s

  Department Of Electrophysics National Chiao Tung University

• Chao Tien

  National Device Laboratory

• Lin H‐c

  National Nano Device Laboratories

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Nano Device Lab.

• Chien Chao-hsin

  Institute Of Electronics National Chiao-tung University

• Chang Sun-jay

  Institute Of Electronics National Chiao-tung University

• Huang Tiao-yuan

  National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

• Chang Chun-Yen

  National Chiao Tung University, Hsinchu, Taiwan, 30050, Republic Of China

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