Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_<1-x> Heterojunction Bipolar Transistors under High-Level Injection

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-04-15

著者

• Sze S‐m

  National Nano Device Lab. Hsinchu Twn

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• SZE Simon

  National Nano Device Laboratory

• Sze S

  National Chiao‐tung Univ. Hsinchu Twn

• CHYAN Yih-Feng

  Institute of Electronics, National Chiao Tung University

• SZE Simon

  Institute of Electronics, National Chiao Tung University

• REIF Rafael

  Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology

• Sze Simon

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University:na

• Sze Simon-m.

  National Nano Device Laboratory

• Reif R

  Mit Ma Usa

• Chyan Yih-feng

  Institute Of Electronics National Chiao Tung University:(present Address)microelectronics And Inform

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

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