Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-01
著者
-
Mei Yu-jen
Department Of Electrical Engineering Ching-yun Institute Of Technology
-
Tsai Tsung-ming
Institute Of Electronics National Chiao Tung University
-
CHANG Ting-Chang
Department of Physics, National Sun Yat-Sen University
-
Sze Simon
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University:na
-
MOR Yi-Shien
Institute of Electronics, National Chiao Tung University
-
LlU Po-Tsun
National Nano Device Laboratory
-
CHEN Chi-Wen
Institute of Electronics, National Chiao Tung University
-
SZE Simon-M.
Institute of Electronics, National Chiao Tung University
-
LIU Po-Tsun
National Nano Device Laboratory
-
Chang T‐c
Department Of Physics National Sun Yat-sen University
-
Liu Po-tsun
National Nano Device Lab.
-
Chen Chi-wen
Institute Of Electronics National Chiao Tung University
-
Mor Yi-shien
Institute Of Electronics National Chiao Tung University
-
Chang Ting-chang
Department Of Physics National Sun Yat-sen University
-
Chang Ting-chang
Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora
-
Sze Simon-m.
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratory
-
Chang Ting-chang
Department Of Physics National Sun Yat-sen University:national Nano Device Laboratory
-
Mor Yi-Chien
Institute of Electronics, National Chiao Tung University
関連論文
- Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
- Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
- Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
- Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
- Psychiatric morbidity and pregnancy outcome in a disaster area of Taiwan 921 earthquake
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
- Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
- Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
- Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
- Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors
- Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of LOW-k Hydrogen Silisesquioxane
- Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure
- Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface
- Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
- An Efficient Improvement for Barrier Effect of W-filled Contact
- An Efficient Improvement for Barrier Effect of W-Filled Contact
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
- Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
- A Precision Alignment with Moire Technique and Differential Amplifier
- A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
- Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications
- Glucose-regulated protein 58 modulates cell invasiveness and serves as a prognostic marker for cervical cancer
- Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films
- Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors
- Long-term follow up of cervical cancer patients with unexplained squamous cell carcinoma antigen elevation after post-therapy surveillance using positron emission tomography
- Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
- Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-$k$ Hydrogen Silisesquioxane
- An Efficient Improvement for Barrier Effect of W-filled Contact
- Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications
- A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage