Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-30

著者

• CHEN Hsuen-Li

  National Nano Device Laboratories

• LIU Po-Tsun

  National Nano Device Laboratory

• Liu Po-tsun

  National Nano Device Lab.

• Wang Way-seen

  National Taiwan University

• Cheng Chao-chia

  Chung Hua University

• HSIEH Chung-I

  National Nano Device Lab.

• CHANG Chia-Pin

  Chung Hua University

• HSU Wen-Hau

  National Taiwan University

関連論文

• Mechanism and Modeling of Ring Pattern Formation for Electron Beam Exposure on Zwitterresist
• Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of LOW-k Hydrogen Silisesquioxane
• Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure
• Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface
• Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
• Room Temperature Operation of a Coulomb Blockade Sensor Fabricated by Self-Assembled Gold Nanoparticles using Deoxyribonucleic Acid Hybridization
• Diluted Low Dielectric Constant Materials as Bottom Antireflective Coating Layers for both KrF and ArF Lithography Processes
• Thermal Flow and Chemical Shrink Techniques for Sub-100 nm Contact Hole Fabrication in Electron Beam Lithography
• Reduction Substrate Alkaline Contamination by Utilizing Multi-Layer Bottom Antireflective Coating Structures in ArF Lithography
• Low Dielectric Constant Polymer Materials as Bottom Antirefiective Coating Layers for both KrF and ArF Lithography
• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
• Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications
• Multilayer Bottom Antireflective Coatings for High Numerical Aperture and Modified Illumination Exposure Systems
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-$k$ Hydrogen Silisesquioxane
• Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications
• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

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