A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

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概要

• 論文の詳細を見る

• A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550°C. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-03-15

著者

• Liu Chin-fu

  Department Of Physics National Sun Yat-sen University

• Liu Po-tsun

  National Nano Device Lab.

• Peng Du-zen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Yeh Ping-hung

  Department Of Physics National Sun Yat-sen University

• Chang Ting-chang

  Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora

• Yeh Ping-Hung

  Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.

• Peng Du-Zen

  Institute of Electronics, National Chiao Tung University, Taiwan, R.O.C.

• Chang Ting-Chang

  Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.

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