Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
In this paper, we discuss the threshold voltage instability of two distinct layouts of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs). By simultaneously applying gate and drain bias stress, we show that the average threshold voltage shift of circular a-Si:H TFTs is 54% less than that of conventional inverted staggered a-Si:H TFTs. This result is primarily due to that the circular layout reduces the channel electron concentration. ISE-DESSIS (Integrated System Engineering DEvice Simulation for Smart Integrated Systems) was used to simulate the parallel electric field and obtain the total channel electron concentration. The simulation results closely correspond to the explanation in this study. These results indicate a significant impact of improving threshold voltage stability by a layout method.
- 2007-03-30
著者
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Chang Ting-chang
Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora
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CHIANG Ko-Yu
Electronics and Optoelectronics Research Laboratories (EOL) Industrial Technology Research Institute
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Tseng Huai-Yuan
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Tseng Huai-Yuan
Electronics and Optoelectronics Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 310, Taiwan, R.O.C.
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Lu Hau-Yan
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
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Kung Chen-Pang
Electronics and Optoelectronics Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 310, Taiwan, R.O.C.
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Chiang Ko-Yu
Electronics and Optoelectronics Research Laboratories (EOL), Industrial Technology Research Institute (ITRI), Bldg. 51, No. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 310, Taiwan, R.O.C.
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