Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures
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概要
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In this study, the interface properties of pentacene organic thin-film transistors (OTFTs) were analyzed at elevated temperatures. The pentacene layers were deposited on the poly($\alpha$-methyl styrene) (PMS)-treated SiO2 dielectric layers. The threshold voltages ($V_{\text{t}}$) were varied drastically in the temperature range from 100 to 200 °C due to the phase transition of the PMS layer after the $T_{\text{g}}$ point ($T_{\text{gPMS}}=76$ °C). After high temperature electric measurements, the deformation of pentacene was observed using atomic force microscopy and the oxidation of pentacene was also observed in the fourier transform infrared spectroscopy (FTIR) (about 80 °C) by the appearance of C=O bonds. The drastic decrease in mobility of pentacene OTFTs about 100 °C was attributed to the distortion of the pentacene conjugate structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Chan Yi-jen
Department Of Electrical Engineering National Central University
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Tseng Huai-Yuan
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Lo Po-Yuan
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Pei Zing-Way
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Hwang Jiunn-Jye
Electronic Research and Service Organization (ERSO), Industrial Technology and Research Institute (ITRI), Hsinchu, 310, Taiwan, Republic of China
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Chan Yi-Jen
Department of Electrical Engineering, Nation Central University, Chungli, Taiwan 32054, Republic of China
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