A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-03-15

著者

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• Chang C‐y

  Institute Of Electronics National Chiao Tung University

• CHANG Ting-Chang

  Department of Physics, National Sun Yat-Sen University

• PENG Du-Zen

  Institute of Electronics, National Chiao Tung University

• Liu Chin-fu

  Department Of Physics National Sun Yat-sen University

• LIU Po-Tsun

  National Nano Device Laboratory

• Chang T‐c

  Department Of Physics National Sun Yat-sen University

• Liu Po-tsun

  National Nano Device Lab.

• Peng Du-zen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• YEH Ping-Hung

  Department of Physics, National Sun Yat-Sen University

• Yeh Ping-hung

  Department Of Physics National Sun Yat-sen University

• Chang Ting-chang

  Department Of Physics National Sun Yat-sen University

• Chang Ting-chang

  Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora

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