Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-$k$ Hydrogen Silisesquioxane
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概要
- 論文の詳細を見る
The characteristics of post-chemical mechanical polishing (post-CMP) low-$k$ hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ@. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ@. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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Tsai Tsung-ming
Institute Of Electronics National Chiao Tung University
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SZE Simon-M.
National Nano Device Laboratories
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CHANG Ting-Chang
National Nano Device Laboratories
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TSAI Ming-Shih
National Nano Device Laboratory
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CHEN Ben-Chang
National Nano Device Laboratory
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YANG Ya-Liang
National Nano Device Laboratory
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Liu Po-tsun
National Nano Device Lab.
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Yeh Fon-shan
Institute Of Electrical Engineering National Tsing Hua University
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Tseng Tseung-yuen
Institute Of Electronics National Chiao Tung University
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Sze Simon-M.
National Nano Device Laboratory, 1001-1 Ta-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
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Tseng Tseung-Yuen
Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
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Chen Ben-Chang
National Nano Device Laboratory, 1001-1 Ta-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
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Liu Po-Tsun
National Nano Device Laboratory, 1001-1 Ta-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
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Tsai Ming-Shih
National Nano Device Laboratory, 1001-1 Ta-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
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Tsai Tsung-Ming
Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsinchu 300, Taiwan, R.O.C.
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