Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots

スポンサーリンク

概要

• 論文の詳細を見る

• We present a theoretical study of the electron energy states in three-dimensional narrow gap semiconductor quantum dots with different shapes under an external magnetic field. The problem is solved by using the effective one-electronic-band Hamiltonian, the energy- and position-dependent electron effective mass approximation, and the Ben Daniel-Duke boundary condition. We investigate small InAs/GaAs quantum dots with disk, lenticular, and conical shapes. Electron energy dependence on volume is expressed as V^<-γ> where the exponent γ depends on the dot shapes and can vary over a wide range. The most stable against the dot size deviations (among dots of the same base radius) is the energy spectra of the conical dots. In addition, this type of dot also has the weakest diamagnetic shift. Contrarily, quantum dots with cylindrical shapes show a wide deviation in energy and a relatively strong diamagnetic shift. [DOI: 10.1143/JJAP.41.2698]

• 社団法人応用物理学会の論文
• 2002-04-30

著者

• Li Yiming

  National Chiao Tung Univ. Hsinchu Twn

• SZE Simon-M.

  National Nano Device Laboratories

• Sze Simon-m.

  National Nano Device Laboratories:institute Of Electronics National Chiao Tung University

• Li Y

  National Nano Device Laboratories:microelectronics And Information Systems Research Center National

• Lee Chien-ping

  Institute Of Electronics National Chiao Tung University

• Tretyak Oleg

  Kiev Taras Shevchenko University

• VOSKOBOYNIKOV Oleksandr

  Institute of Electronics, National Chiao Tung University

• Voskoboynikov Oleksandr

  Institute Of Electronics National Chiao Tung University:kiev Taras Shevchenko University

関連論文

• An Investigation of Magnetic Field Effects on Energy States for Nanoscale InAs/GaAs Quantum Rings and Dots(the IEEE International Conference on SISPAD '02)
• Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of LOW-k Hydrogen Silisesquioxane
• Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design
• Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors
• Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings
• A Genetic Algorithm Approach to InGaP/GaAs HBT Parameter Extraction and RF Characterization
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-$k$ Hydrogen Silisesquioxane

スポンサーリンク