Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

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概要

• 論文の詳細を見る

• Ultralow dielectric constant (${<}2.0$) porous materials have received much attention as next-generation dielectric materials. In this study, optical properties of porous-methyl-silsesquioxane(MSQ)-like films (porous polysilazane, PPSZ) were characterized for optical waveguide devices applications. Measured results indicate that the refractive index is decreased to approximately 1.320 as the hydration time exceeds 24 h. The measured refractive index is about 1.163 at a wavelength of 1550 nm. PPSZ films have low absorption in the 500 to 2000 nm wavelength regime. Because of their relatively low refractive index and low absorption over a large spectral regime, PPSZ films can be good cladding materials for use in optically integrated devices with many high-refractive-index materials such as silicon oxide, silicon nitride, silicon, and polymers. We demonstrate two structures, ridge waveguides and large-angle Y-branch power splitters, composed of PPSZ and SU8 films to illustrate the use of low dielectric constant (K) cladding materials. The simulation results indicate that the PPSZ films provide better confinement of light. Experimentally, a large-angle Y-branch power splitter with PPSZ cladding can be used to guide waves with the large branching angle of 33.58°.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• Liu Po-tsun

  National Nano Device Lab.

• Wang Way-seen

  National Taiwan University

• Cheng Chao-chia

  Chung Hua University

• Chen Hsuen-li

  National Nano Device Lab.

• HSIEH Chung-I

  National Nano Device Lab.

• CHANG Chia-Pin

  Chung Hua University

• HSU Wen-Hau

  National Taiwan University

• Chen Hsuen-Li

  National Taiwan University, Taipei, Taiwan

• Hsieh Chung-I

  National Nano Device Lab., 1001-1 Ta Hsueh Road, Hsinchu, Taiwan

• Wang Way-Seen

  National Taiwan University, Taipei, Taiwan

• Hsu Wen-Hau

  National Taiwan University, Taipei, Taiwan

• Liu Po-Tsun

  National Nano Device Lab., 1001-1 Ta Hsueh Road, Hsinchu, Taiwan

• Cheng Chao-Chia

  Chung Hua University, Hsinchu 300, Taiwan

関連論文

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• Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications
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• Mechanism and Modeling of Ring Pattern Formation for Electron Beam Exposure on Zwitterresist
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-$k$ Hydrogen Silisesquioxane
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• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

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