Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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Chang C‐y
Department Of Electronics Engineering National Chiao Tung University
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Chien C‐h
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Chang Chun-yen
Instiute Of Electronics National Chiao-tang University
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Chang Chun-yen
Department Of The Electro-optical Engineering National Chiao Tung University
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CHEN Liang-Po
National Nano Device Laboratory
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LIN Horng-Chih
National Nano Device Labs.
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Lin H‐c
National Nano Device Laboratories
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Lin Horng-chih
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
National Nano Device Lab.
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TSAI Wen-Chung
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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JUNG Tz-Guei
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
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CHANG Ting-Chang
National Nano Device Laboratories
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Tsai Wen-chung
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
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Chang T‐c
Department Of Physics National Sun Yat-sen University
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Chen Liang-po
National Nano Device Laboratories
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Jung Tz-guei
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
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Chang T‐c
National Nano Device Laboratories:department Of Physics National Sun Yat-sen University
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Chang C‐y
Department Of Electronics Engineering Nation Chiao Tung University
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Lin Horng-chih
National Chiao Tung University
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