A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires
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概要
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In this study, we proposed a new methodology for probing the electrical properties of heavily doped polycrystalline silicon (poly-Si) nanowires (NWs), including active doping concentration, mobility, and interface fixed charge density. Implementation of this procedure is based on the modulation of the device operation of a gate-all-around (GAA) junctionless (J-less) transistor from the gated resistor mode to the ungated one. The extracted carrier concentration in the NW is found to be much lower than that of Hall measurements, while a negative fixed charge density is identified with the procedure. Dopant segregation at the oxide interface is postulated to be closely related to these observations.
- 2013-04-25
著者
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Huang Tiao-yuan
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Huang Tiao-Yuan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Lin Zer-Ming
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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