Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• HUANG Tiao-Yuan

  Department of Electronics Engineering, National Chiao Tung University

• LIN Horng-Chih

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LU Chia-Yu

  National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Lu Chia-yu

  Department Of Physics National Cheng Kung University

• CHANG Yi-Feng

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Huang Tiao-yuan

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  National Chiao Tung University

• Chang Yi-feng

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

• Lu Chia-Yu

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, Taiwan 300, R.O.C.

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