Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment

スポンサーリンク

概要

• 論文の詳細を見る

• In this work, we found that employing a post deposition N2O plasma treatment following the deposition of HfO2 film can effectively improve the electrical characteristics of p-type channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) with a HfO2 gate stack in terms of lower gate leakage current, lower interface state density, superior subthreshold swing, higher normalized transconductance and enhanced driving current even though it had led to a slightly higher equivalent oxide thickness (EOT) value of the HfO2 gate stack by around 0.3 nm. In order to clarify the attributes of the improvements, we used charge pumping (CP) measurement to analyze the densities of interface states and bulk traps in the HfO2 gate stacks. The improvements are then ascribed to the higher interface quality offered by the post deposition N2O plasma treatment. Moreover, we found that to more accurately estimate the bulk traps from the CP measurement, the leakage should be taken into account especially at low frequencies. Finally, it was found that the levels of the bulk traps and interface states can be reduced by the N2O plasma treatment, which also helps significantly eliminate the degradation of the gate stack during the subsequent voltage stress.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-11-15

著者

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• CHIEN Chao-Hsin

  National Nano Device Laboratories

• Lehnen Peer

  Aixtron Ag Kackertstr

• Lu Wen-tai

  Institute Of Electronics National Chiao Tung University

• Yang Ming-jui

  National Nano Device Laboratories

• Shen Shih-wen

  National Nano Device Laboratories

• Lan Wen-ting

  Institute Of Electronics National Chiao-tung University

• Lee Tsung-chieh

  Institute Of Electronics National Chiao-tung University

• Shen Shih-Wen

  National Nano Device Laboratory, Hsinchu, Taiwan 300, R.O.C.

• Lu Wen-Tai

  Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

• Lan Wen-Ting

  Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

• Huang Tiao-Yuan

  Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

• Yang Ming-Jui

  National Nano Device Laboratory, Hsinchu, Taiwan 300, R.O.C.

• Chien Chao-Hsin

  National Nano Device Laboratory, Hsinchu, Taiwan 300, R.O.C.

• Lee Tsung-Chieh

  Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.

関連論文

• Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
• Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• Superior SONOS Flash Memory with Tapered-Bandgap Nitride Layer
• Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
• Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
• Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
• Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
• Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
• Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
• Characteristics of Polycrystalline Silicon Thin-Film Transistors with Electrical Source/Drain Extensions Induced by a Bottom Sub-Gate
• Impacts of SiN Deposition Conditions on NMOSFETs
• A Novel Method for the Preparation of Si Nanowires
• Effect of Strain on Static and Dynamic NBTI of pMOSFETs
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Reliability of Strained SiGe Channel p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ultra-Thin ($\text{EOT}=3.1$ nm) N2O-Annealed SiN Gate Dielectric
• Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
• Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology
• Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric
• Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO3 Thin Films on Cu(Mg) Bottom Electrodes
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Characteristics of the Inter-Poly Al2O3 Dielectrics on NH3-Nitrided Bottom Poly-Si for Next-Generation Flash Memories
• The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
• Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation

もっと見る 閉じる

スポンサーリンク