Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO3 Thin Films on Cu(Mg) Bottom Electrodes
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概要
- 論文の詳細を見る
Cu(Mg) alloy films have replaced pure Cu as bottom electrodes for (Ba,Sr)TiO3 (BST) capacitors used in high-frequency devices. A combined BST/Cu(Mg) structure reduced the leakage current density to $3.0\times 10^{-8}$ A/cm2 at 1 MV/cm, and increased the breakdown field from 0.4 to 2.4 MV/cm at $10^{-6}$ A/cm2, from the corresponding values of the BST/Cu structure. High-quality characteristics probably follow the formation of a self-aligned MgO layer following the deposition of a Cu(Mg) alloy by annealing in an oxygen ambient, yielding an electrode with an excellent diffusion barrier and electrical characteristics, which is therefore effective in a BST thin-film capacitor. Additionally, the bias temperature stress and time-dependent dielectric breakdown in ambient nitrogen at an electric field of up to 2 V at temperatures between 100 and 200 °C were considered to accelerate Cu+ ion drift.
- 2006-06-30
著者
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Lee Jain-tsai
Department Of Materials Science And Engineering National Chiao-tung University
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Wu Wen-fa
National Nano Device Laboratories
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Shen Shih-wen
National Nano Device Laboratories
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TSAI Kou-Chiang
Department of Materials Science and Engineering, National Chiao Tung University
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Chao Chuen-guang
Department Of Material Sciences And Engineering National Chiao Tung University
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Wu Wen-Fa
National Nano Device Laboratories, No. 26 Prosperity Road 1, Science-based Industrial Park, Hsinchu, Taiwan, Republic of China
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Shen Shih-Wen
National Nano Device Laboratories, No. 26 Prosperity Road 1, Science-based Industrial Park, Hsinchu, Taiwan, Republic of China
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Lee Jain-Tsai
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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Chao Chuen-Guang
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
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